dm n6140l document number: ds 35621 rev. 4 - 2 1 of 6 www.diodes.com december 2014 ? diodes incorporated dm n6140l new product 60v n - channel enhancement mode mosfet product summary v (br)dss r ds(on) max i d t a = + 25 c 60 v 14 0 m ? @ v gs = 10 v 2. 3 a 17 0 m ? @ v gs = 4.5 v 2. 1 a description this new generation mosfet is designed to minimize the on - state resistance (r ds( on ) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? dc - dc converters ? power m anagement f unctions ? analog switch features and benefits ? low on - resistance ? low input capacitance ? fast switching speed ? low input/output leakage ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3 ) ? qualified to aec - q101 standards for high reliability mechanical data ? case: sot 23 ? case material: molded plastic, green molding compound ; ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections: see diagram ? terminals: finish C matte tin a nnealed over copper l eadframe . solderable per mil - std - 202, method 208 ? weight: 0.00 72 grams ( approximate ) ordering information (note 4 ) part number case packaging dm n614 0 l - 7 so t23 3 , 0 00/tape & reel dm n6140l - 13 sot23 10 , 0 00/tape & reel notes: 1. no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com /quality/lead_free.html for more information about diodes incorporateds definitions of halogen - and antimony - free, "green" and lead - free. 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging details, go to our website at http: //www.diodes.com /products/packages.html . marking information date code key year 2011 2012 2013 2014 2015 2016 2017 code y z a b c d e month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d t op view pin configuration sot 23 n61 = marking code ym = date code marking y = year (ex: y = 2011) m = month (ex: 9 = september) equivalent circuit d g s d s g n61 y m e3
dm n6140l document number: ds 35621 rev. 4 - 2 2 of 6 www.diodes.com december 2014 ? diodes incorporated dm n6140l new product maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value units drain - source voltage v dss 60 v gate - source voltage v gss ? gs = 10 v steady state t a = + 25 c t a = + 70 c i d 1.6 1.2 a t<10s t a = + 25 c t a = + 70 c i d 2.0 1.6 a continuous drain current (note 6 ) v gs = 10 v steady state t a = + 25 c t a = + 70 c i d 2.3 1.8 a t<10s t a = + 25 c t a = + 70 c i d 2.9 2.3 a maximum continuous body diode f orward current (note 6 ) i s 1.5 a pulsed drain current ( 10 dm 10 a thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 5 ) t a = + 25c p d 0.7 w t a = + 70 c 0.4 thermal resistance, junction to ambient (note 5 ) s teady state r ? ja 183 c/w t<10s 115 total power dissipation (note 6 ) t a = + 25c p d 1.3 w t a = + 70 c 0.8 thermal resistance, junction to ambient (note 6 ) s teady state r ? ja 94 c/w t<10s 61 thermal resistance, junction to case r ? j c 39 operating and storage temperature range t j, t stg - 5 5 to + 15 0 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7 ) drain - source breakdown voltage bv dss 60 gs = 0v, i d = 250 a zero gate voltage drain current i dss ds = 60 v, v gs = 0v gate - source leakage i gss gs = ? ds = 0v on characteristics (note 7 ) gate threshold voltage v gs(th) 1 ds = v gs , i d = 250 a static drain - source on - resistance r ds(on) gs = 10 v, i d = 1.8 a 115 170 v gs = 4 .5v, i d = 1.3 a forward transfer admittance |y fs | ds = 1 5v, i d = 1.8 a diode forward voltage v sd gs = 0v, i s = 0.45 a dynamic characteristics (note 8 ) input capacitance c iss ds = 40 v, v gs = 0v f = 1.0mhz output capacitance c oss rss g ds = 0v, v gs = 0v, f = 1.0mhz total gate charge ( v gs = 10 v ) q g ds = 30 v, i d = 1.8 a total gate charge ( v gs = 5 v ) q g gs gd d(on) ds = 30 v, v gs = 10 v, r g = 6 .0 ?? d = 1.8 a turn - on rise time t r d(off) f rr f = 1.8a, di/dt =100a/ s reverse r ecovery c harge q rr notes: 5 . device mounted on fr - 4 pc board, with minimum recommended pad layout, single sided. 6 . device mounted on fr - 4 substrate pc board, 2oz copper, with thermal vias to bottom layer 1in . square copper plate . 7 . short duration pulse test used to minimize self - heating effect. 8 . guaranteed by design. not subject to production testing.
dm n6140l document number: ds 35621 rev. 4 - 2 3 of 6 www.diodes.com december 2014 ? diodes incorporated dm n6140l new product 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0 1 2 3 4 5 v , drain-source voltage (v) figure 1 typical output characteristic ds i , d r a i n c u r r e n t ( a ) d v = 4.5v gs v = 3.5v gs v = 3.0v gs v = 2.5v gs v = 10v gs v = 4.0v gs 0 2 4 6 8 0 1 2 3 4 5 v , gate-source voltage (v) figure 2 typical transfer characteristics gs i , d r a i n c u r r e n t ( a ) d v = 5.0v ds t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2 i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 1 2 3 4 5 6 7 8 v = 4.5v gs v = 10v gs 0 0.1 0.2 0.3 0.4 0.5 2 3 4 5 6 7 8 9 10 v , gate-source voltage (v) figure 4 typical drain-source on resistance vs. gate-source voltage gs r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? i = 1.8a d i = 1.3a d 0 0.04 0.08 0.12 0.16 0.2 0.24 0.28 0.32 0.36 0.4 0 1 2 3 4 5 6 7 8 i , drain current (a) figure 5 typical on-resistance vs. drain current and temperature d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) figure 6 on-resistance variation with temperature j ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) v = 4.5v i = 2.5a gs d v = v i =5.0a gs d 10
dm n6140l document number: ds 35621 rev. 4 - 2 4 of 6 www.diodes.com december 2014 ? diodes incorporated dm n6140l new product 0 0.06 0.12 0.18 0.24 0.3 -50 -25 0 25 50 75 100 125 150 tj, junction temperature ( c) figure 7 on-resistance variation with temperature ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v = 4.5v i = 2.5a gs d v = v i = 5.0a gs d 10 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3 -50 -25 0 25 50 75 100 125 150 v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) i = 1ma d i = 250a d v , source-drain voltage (v) figure 9 diode forward voltage vs. current sd 0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1 1.2 i , s o u r c e c u r r e n t ( a ) s t = 25c a 10 100 1000 0 5 10 15 20 25 30 35 40 v , drain-source voltage (v) figure 10 typical junction capacitance ds c , j u n c t i o n c a p a c i t a n c e ( p f ) t f=1mhz c iss c oss c rss 0 2 4 6 8 10 0 2 4 6 8 10 q , total gate charge (nc) figure 11 gate charge g v g a t e t h r e s h o l d v o l t a g e ( v ) g s v = 30v i = a ds d 1.8 0.001 0.01 0.1 1 10 100 0.1 1 10 100 v , drain-source voltage (v) figure 12 soa, safe operation area ds r limited ds(on) p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w p = 10 s w t = 150c t = 25c j(max) a v = 10v single pulse dut on 1*mrp board gs i , d r a i n c u r r e n t ( a ) d
dm n6140l document number: ds 35621 rev. 4 - 2 5 of 6 www.diodes.com december 2014 ? diodes incorporated dm n6140l new product package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. suggested pad layout please see ap02001 at http://w ww.diodes.com/datasheets/ap02001 .pdf for the latest version. sot23 dim min max typ a 0.37 0.51 0.40 b 1.20 1.40 1.30 c 2.30 2.50 2.40 d 0.89 1.03 0.915 f 0.45 0.60 0.535 g 1.78 2.05 1.83 h 2.80 3.00 2.90 j 0.013 0.10 0.05 k 0. 890 1. 0 0 0.975 k1 0.903 1.10 1.0 25 l 0.45 0.61 0.55 l 1 0. 2 5 0. 55 0. 40 m 0.085 0.1 50 0.11 0 ? ? all dimensions in mm dimensions value (in mm) z 2.9 x 0.8 y 0.9 c 2.0 e 1.35 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, pulse duration time (sec) figure 13 transient thermal resistance r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e d = 0.5 d = 0.7 d = 0.9 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse r (t) = r(t) * r r = 169c/w duty cycle, d = t1/ t2 ?? ? ja ja ja x e y c z j k1 k l1 gauge plane 0.25 h l m all 7 a c b d g f a
dm n6140l document number: ds 35621 rev. 4 - 2 6 of 6 www.diodes.com december 2014 ? diodes incorporated dm n6140l new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated do es not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemni fy and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applicat ion. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this doc ument is written in english but may be translated into multiple languages for reference. only the english version of this do cument is the final and determinative format released by diodes incorporated. life support diodes incorporated products are speci fically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or system s which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. custom ers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements c oncerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, cus tomers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 2014 , diodes incorporated www.dio des.com
|
